型号:

NTMSD3P102R2G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:MOSFET P-CH 20V 2.34A 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NTMSD3P102R2G PDF
产品变化通告 Product Discontinuation 04/April/2008
Wire Change 12/May/2009
标准包装 2,500
系列 FETKY™
FET 型 MOSFET P 通道,金属氧化物
FET 特点 二极管(隔离式)
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 2.34A
开态Rds(最大)@ Id, Vgs @ 25° C 85 毫欧 @ 3.05A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 250µA
闸电荷(Qg) @ Vgs 25nC @ 10V
输入电容 (Ciss) @ Vds 750pF @ 16V
功率 - 最大 730mW
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
其它名称 NTMSD3P102R2GOS
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